AO3409 P-Channel MOSFET – Imported Original, SOT-23 Package

AO3409 P‑Channel MOSFET – SOT‑23, Original High-Speed Switch

Technical Details

• Part Number: AO3409
• Polarity: P‑Channel Enhancement MOSFET
• Drain‑Source Voltage (V_DSS): −30 V
• Continuous Drain Current: −2.6 A
• R_DS(on): ≈110 mΩ @ V_GS= −10 V; ≈180 mΩ @ V_GS= −4.5 V
• Gate Threshold Voltage: ~−3 V (at 250 µA)
• Gate Charge (Q_g): ~4.3 nC (at −10 V), ~2.2 nC (at −4.5 V)
• Input Capacitance: ~370 pF
• Power Dissipation: ~1.4 W
• Operating Temperature Range: −55 °C to +150 °C
• Mounting Type: Surface Mount, SOT‑23‑3

Features

• Trench‑type P‑channel MOSFET technology for low resistance and fast switching
• Low gate charge enables efficient PWM use
• Suitable for load‑switch applications or battery management
• Reliable operation over industrial temperature range up to 150 °C

Applications

• PMOS load-switch in portable devices
• PWM control for DC–DC converters
• Reverse current protection and power management circuits
• Battery-powered electronics and system power distribution
• General-purpose high-side switching tasks

Physical Attributes

• Pins: 3 (Gate, Drain, Source)
• Dimensions: ~2.9 mm × 1.6 mm × 1.25 mm (L × W × H) typical for SOT‑23‑3 package
• Weight: ~0.008 g
• Mounting Type: Surface Mount (SMT), SOT‑23‑3

Package Includes

• 1 × AO3409 P‑Channel MOSFET – SOT‑23 surface-mount package