FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package
FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package
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- Product SKU: INTEG261
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Specification
Description
FQD10N60 N-Channel MOSFET 600V 10A – TO-220 Package
The FQD10N60 is a high-voltage N-Channel Power MOSFET capable of withstanding up to 600V and handling 10A continuous current. It is designed for high-efficiency switching applications with low gate charge and fast switching speed. Its TO-220 package provides effective heat dissipation, ideal for power supplies, inverters, and motor drive applications.Technical Details
- Part Number: FQD10N60
- Type: N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 10A
- Gate Threshold Voltage (VGS(th)): 2V – 4V
- Maximum Gate-Source Voltage (VGS): ±30V
- Drain-Source On Resistance (RDS(on)): ~0.85Ω
- Total Gate Charge (Qg): ~55nC
- Power Dissipation: ~125W
- Package: TO-220
- Mounting Type: Through-Hole
Features
- High voltage capability up to 600V
- Low gate drive requirements
- Fast switching speed
- Low RDS(on) for better efficiency
- TO-220 package with good thermal dissipation
Applications
- Switching Power Supplies
- Motor Control
- Lighting Ballasts
- Inverter Circuits
- General Purpose High-Voltage Switching
Physical Attributes
- Package: TO-220
- Leads: 3 (Gate, Drain, Source)
- Dimensions: Approx. 10mm × 15mm × 4.5mm (Body)
- Mounting Type: Through-Hole
- Weight: ~1g
Package Includes
- 1 x FQD10N60 N-Channel MOSFET 600V 10A – TO-220 Package