FQD1N60 N-Channel MOSFET High-Power Switching Transistor
Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.
FQD1N60 N-Channel MOSFET High-Power Switching Transistor
Available:In Stock
- Product SKU: INTEG185
₹ 20
₹ 39
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Specification
Description
FQD1N60 N-Channel MOSFET High-Power Switching Transistor
The FQD1N60 is a high-performance N-Channel MOSFET designed for efficient high-voltage, high-speed switching applications. Housed in a compact TO-252 (DPAK) package, it features low gate charge, low on-resistance, and fast switching capability, making it ideal for use in power supplies, motor drivers, converters, and other demanding electronic circuits. With a drain-source voltage rating of 600V and continuous drain current handling of up to 1A, the FQD1N60 provides excellent reliability and thermal performance in compact designs.Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.
Technical Details
- Part Number: FQD1N60
- Type: N-Channel MOSFET
- Package: TO-252 (DPAK)
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 1A
- Gate Threshold Voltage (VGS(th)): 2V to 4V
- RDS(on) (Max): 5Ω @ VGS = 10V, ID = 0.5A
- Total Gate Charge (Qg): 12nC (typical)
- Input Capacitance (Ciss): 230pF (typical)
- Power Dissipation: 2W (typical)
- Operating Temperature Range: -55°C to +150°C
- Mounting Type: Surface Mount
Features
- High voltage capability: 600V VDS
- Low gate charge for efficient switching
- Compact TO-252 (DPAK) surface-mount package
- Fast switching speed for high-frequency applications
- Low RDS(on) for reduced conduction losses
- Thermally efficient design supports up to 1A current
- Reliable performance in high-power applications
- Suitable for power supplies, converters, and motor control
Applications :
- Switch-mode power supplies (SMPS)
- DC-DC converters
- Motor control circuits
- Battery management systems
- Inverter circuits
Physical Attributes
- Weight (g): 2
- Length: 2.92mm
- Width: 1.3mm
- Height: 1.1mm
Package Includes
- 1 x FQD1N60 N-Channel MOSFET High-Power Switching Transistor