FQD2N60 N-Channel MOSFET High-Power Switching Transistor
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
Great
-51%
FQD2N60 N-Channel MOSFET -1
FQD2N60 N-Channel MOSFET -2
FQD2N60 N-Channel MOSFET -3
FQD2N60 N-Channel MOSFET -1
FQD2N60 N-Channel MOSFET -2
FQD2N60 N-Channel MOSFET -3

FQD2N60 N-Channel MOSFET High-Power Switching Transistor

Available:In Stock
  • Product SKU: INTEG186
Wishlist
₹ 24 ₹ 49
Available offers
Best Rates

on Express Shipping – Hurry! Shipping starts from Rs69.

Tc
Free Shipping Offer -

Avail free shipping on all orders above Rs999.

Tc
Volume Discounts-

Buy More Save More! Discounts upto 20%. Contact us

Special Bulk Discounts

for colleges, Schools, Companies & resellers Contact us

Cash on Delivery

Available above Rs 499

Tc
Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 600V N-Channel MOSFET
  • 1.9A current handling
  • Low gate charge
  • TO-252 surface mount
Services
  • Email Support
  • Video Support to be purchased separately
Easy Payment Options
  • Netbanking
  • Debit/Credit cards
  • Cash on Delivery
  • E-wallets/UPI
Shipping Details
International Shipping
Available

  Need Volume Discounts? Deals are specially designed for you. Click here

  Need Customization? Provide us more details Click here

Warehouse Details   36H-161N

Image
Secure

Specification

Description

FQD2N60 N-Channel MOSFET High-Power Switching Transistor

The FQD2N60 is a brand new, imported N-Channel MOSFET designed for high-voltage and high-efficiency switching applications. With a drain-source voltage rating of 600V and continuous current handling up to 1.9A, it is ideal for demanding power management tasks. It features low gate charge, low RDS(on), and is 100% avalanche tested for enhanced durability. This RoHS-compliant MOSFET is perfect for use in power supplies, lighting systems, and motor control circuits where reliable high-voltage switching is essential.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

  • 600V Drain-Source Voltage
  • 1.9A Continuous Drain Current
  • 4.7Ω Max RDS(on)
  • ±30V Max Gate-Source Voltage
  • 8.5nC Typical Gate Charge
  • 235pF Input Capacitance
  • TO-252-3 Surface Mount Package
  • -55°C to 150°C Operating Temp
  • 100% Avalanche Tested
  • RoHS Compliant

Features

  • High-voltage capability up to 600V
  • Handles continuous drain current up to 1.9A
  • Low RDS(on) for efficient power switching
  • Low gate charge for fast switching performance
  • 100% avalanche energy rated for high reliability
  • RoHS compliant for environmental safety
  • Thermally efficient TO-252 (DPAK) package
  • Wide operating temperature range: -55°C to +150°C

Applications :

  • Switch-mode power supplies (SMPS)
  • High-voltage lighting systems
  • DC-DC converters
  • Motor control circuits
  • Battery charging systems

Physical Attributes

  • Weight (g): 2
  • Length: 2.92mm
  • Width: 1.3mm
  • Height: 1.1mm

Package Includes

  • 1 x FQD2N60 N-Channel MOSFET High-Power Switching Transistor

Customer Reviews

Be the first to write a review
0%
(0)
0%
(0)
0%
(0)
0%
(0)
0%
(0)