FQD4N60 N-Channel MOSFET High-Power Switching Transistor
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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FQD4N60 N-Channel MOSFET -1
FQD4N60 N-Channel MOSFET High-Power Switching Transistor
FQD4N60 N-Channel MOSFET High-Power Switching Transistor
FQD4N60 N-Channel MOSFET -1
FQD4N60 N-Channel MOSFET High-Power Switching Transistor
FQD4N60 N-Channel MOSFET High-Power Switching Transistor

FQD4N60 N-Channel MOSFET High-Power Switching Transistor

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  • Product SKU: INTEG187
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 600V N-Channel MOSFET
  • 4A current
  • Low RDS(on)
  • TO-252 package
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Specification

Description

FQD4N60 N-Channel MOSFET High-Power Switching Transistor

The FQD4N60 is a high-performance N-Channel MOSFET designed for high-voltage and high-current applications. With a drain-to-source voltage rating of 600V and continuous current capability of up to 4A, this device delivers efficient and reliable switching performance. Its low RDS(on), fast switching speed, and low gate charge make it ideal for use in power supplies, lighting systems, motor drivers, and other demanding electronic circuits. The FQD4N60 is housed in a compact TO-252 (DPAK) package and is RoHS compliant, ensuring environmental safety and compliance with industry standards.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

  • FET Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 4A
  • Gate Threshold Voltage (VGS(th)): 2–4V
  • RDS(on) (Max): Typically low for efficient switching
  • Gate Charge (Qg): Low for fast switching
  • Package: TO-252 (DPAK)
  • Operating Temperature: -55°C to +150°C
  • RoHS Compliant

Features

  • High voltage rating of 600V
  • Continuous drain current up to 4A
  • Low RDS(on) for efficient power handling
  • Low gate charge for fast switching
  • Compact TO-252 (DPAK) surface-mount package
  • Wide operating temperature range (-55°C to 150°C)
  • RoHS compliant and environmentally friendly
  • Suitable for high-power switching applications

Applications :

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control circuits
  • Lighting ballast circuits
  • Inverter circuits
  • Battery management systems

Physical Attributes

  • Weight (g): 2
  • Length: 2.92mm
  • Width: 1.3mm
  • Height: 1.1mm

Package Includes

  • 1 x FQD4N60 N-Channel MOSFET High-Power Switching Transistor

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