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IRF630 N-Channel Power MOSFET – TO-220, 200V 9A

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Product SKU: INTEG312

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₹ 28 ~~₹ 59~~

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Highlights

Original, High Quality
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Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current: 9A

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Warehouse Details 36H-168N

Specification

Description

IRF630 N-Channel Power MOSFET – TO-220, 200V 9A

The IRF630 is a reliable N-Channel Power MOSFET designed for high-voltage, medium-current applications. With a drain-source voltage rating of 200V and a continuous drain current of 9A, this MOSFET is ideal for use in power switching, motor drivers, DC-DC converters, and high-voltage control circuits.

Technical Details

Series: IRF630
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current: 9A
Drain-Source Resistance: 400 mΩ
Gate-Source Voltage: -20V to +20V
Gate-Source Threshold Voltage: 2V
Gate Charge: 31 nC
Operating Temperature Range: -65°C to +150°C
Power Dissipation: 75W
Channel Mode: Enhancement
Configuration: Single
Forward Transconductance: 3S
Rise Time: 15 ns
Mounting Style: Through Hole
Package/Case: TO-220-3

Features

Extremely high dV/dt capability
Fast switching
Low intrinsic capacitance
Ease of paralleling
Gate charge minimized
Simple drive requirement

Applications

Power Supply Circuits: Used in DC-DC converters, switching regulators, and power management systems.

Motor Control: Ideal for driving DC motors and motor driver circuits in robotics and automation.

Battery Management: Suitable for battery-powered equipment and power switching in portable electronics.

Inverters and UPS: Applied in power inverters, uninterruptible power supplies, and energy backup systems.

Automotive Electronics: Employed in automotive control systems for high-efficiency switching.