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IRF640 N-Channel Power MOSFET – TO-220, 200V 18A

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Product SKU: INTEG313

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IRF640 – 200V, 18A N-Channel Power MOSFET
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current: 18A

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Warehouse Details 36H-168O

Specification

Description

IRF640 N-Channel Power MOSFET – TO-220, 200V 18A

The IRF640 is a high-efficiency N-Channel Power MOSFET designed for fast switching and high-voltage applications. With a drain-source voltage of 200V and a continuous drain current of 18A, it delivers reliable performance in demanding environments such as power supplies, motor drivers, DC-DC converters, and inverters.

Technical Details

Series: IRF640
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current: 18A
Drain-Source Resistance: 180 mΩ
Gate-Source Voltage: -20V to +20V
Operating Temperature: -55°C to +150°C
Power Dissipation: 125W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 35 ns
Rise Time: 50 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 13 ns
Mounting Style: Through Hole
Package/Case: TO-220-3

Features

Package Type: TO-220 and other packages
Transistor Type: N-Channel
Drain-Source Voltage: 200V
Gate-Source Voltage: ±20V
Continuous Drain Current: 18A
Pulsed Drain Current: 72A
Power Dissipation: 125W
Gate Threshold Voltage: 2V to 4V

Applications

Power Supply Circuits: Used in DC-DC converters, switching regulators, and power management systems.

Motor Control: Ideal for driving DC motors and motor driver circuits in robotics and automation.

Battery Management: Suitable for battery-powered equipment and power switching in portable electronics.

Inverters and UPS: Applied in power inverters, uninterruptible power supplies, and energy backup systems.

Automotive Electronics: Employed in automotive control systems for high-efficiency switching.