IRF7341 / IRF7341Q SO-8 SMD Dual N-Channel MOSFET 30V

IRF7341 / IRF7341Q SO‑8 SMD Dual N‑Channel MOSFET – 30V

Technical Details

• Part Number: IRF7341 / IRF7341Q
• Polarity: N‑Channel
• Configuration: Dual MOSFET (2× N‑Channel)
• Drain‑Source Voltage (V_DSS): 30 V
• Continuous Drain Current (I_D): ~4.4 A per channel @ 25 °C
• R_DS(on): ~0.045 Ω @ V_GS= 10 V; ~0.065 Ω @ V_GS= 4.5 V
• Gate Threshold Voltage: 1.0 V to 2.5 V
• Gate Charge (Q_g): ~6.5 nC
• Input Capacitance: ~620 pF
• Total Power Dissipation: ~2.5 W
• Package: SO‑8 SMD

Features

• Dual N‑channel MOSFETs in a single SO‑8 package
• Low R_DS(on) and fast switching speed
• Logic-level drive capability
• High efficiency and low power loss
• RoHS compliant and halogen-free (Q version)

Applications

• DC–DC converters
• Battery management systems
• Load switching and power routing
• Notebook computers and mobile electronics
• General-purpose switching applications

Physical Attributes

• Package: SO‑8
• Pins: 8
• Dimensions: ~5.0 mm × 6.0 mm × 1.5 mm
• Mounting Type: Surface Mount (SMD)
• Weight: ~0.02 g

Package Includes

• 1 × IRF7341 / IRF7341Q Dual N‑Channel MOSFET – SO‑8 SMD Package