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IRF740 TO-220 N-Channel MOSFET 400V 10A SMD Power Transistor-1

IRF740 TO-220 N-Channel MOSFET 400V 10A SMD Power Transistor-2

IRF740 TO-220 N-Channel MOSFET 400V 10A SMD Power Transistor-3

IRF740 TO-220 SMD N-Channel MOSFET 55V 10A

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Product SKU: INTEG411

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Highlights

Original, High Quality
KitsGuru Warranty
400V Vds, 10A Id
Fast switching
Low gate charge
TO-220 package
RoHS compliant

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Warehouse Details 12E-130E

Specification

Description

IRF740 TO-220 SMD N-Channel MOSFET 55V 10A

IRF740 is a type of N-channel enhancement-mode power field-effect transistor that uses planar DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These devices are well-suited for high-efficiency switch-mode power supplies and electronic lamp ballasts based on half half-bridge.

Technical Details

Drain-Source Voltage (Vds): 400V
Drain-Gate Voltage (Vdg): 400V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 10A
Power Dissipation (Ptot): 125W
Type: N-Channel MOSFET
Package: TO-220
Mounting: Through Hole / SMD
Ideal for high-voltage switching applications

Features

Low gate charge for efficient switching
Low Crss (typical 35 pF)
Fast switching performance
100% avalanche tested for ruggedness
Improved dv/dt capability
Lead-Free and RoHS Compliant

Applications

1. Switched-Mode Power Supplies (SMPS):
Used as a high-speed switch to regulate output voltage and improve power efficiency in AC-DC or DC-DC power supply systems.

2. High-Voltage DC-DC Converters: Ideal for stepping up or down voltage in systems requiring conversion at high efficiency and high frequency.

3. Motor Control Circuits: Provides fast switching and high current handling for controlling brushless and brushed motors in automation, robotics, and electric vehicles.

4. Inductive Load Switching: Well-suited for driving solenoids, transformers, and inductive coils due to its avalanche-tested ruggedness and dv/dt capability.