IRFB4227 N-Channel MOSFET SMD (TO-220)
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-1
IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-2
IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-3
IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-1
IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-2
IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-3

IRFB4227 N-Channel MOSFET SMD (TO-220)

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  • Product SKU: INTEG430
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 200V, 65A N-Channel MOSFET
  • Low RDS(on): 0.027Ω
  • Gate Charge: 160nC
  • Fast Switching & High Peak Current
  • TO-220 Through-Hole Package
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Specification

Description

IRFB4227 N-Channel MOSFET SMD (TO-220)

The IRFB4227 is a high-performance N-Channel Power MOSFET designed for demanding applications such as Class-D audio amplifiers, motor control, and high-efficiency switching power supplies. With a drain-source voltage rating of 200V and a continuous drain current of 65A, this MOSFET delivers reliable performance even under high-load conditions.

Technical Details

  • Transistor Type: N-Channel
  • Package / Case: TO-220AB
  • Maximum Drain-Source Voltage (VDS): 200V
  • Continuous Drain Current (ID): 65A
  • Maximum Gate-Source Voltage (VGS): ±20V
  • Maximum Power Dissipation (PD): 300W
  • RDS(on) (Max) @ VGS = 10V: 0.027Ω
  • Gate Charge (Qg): 160nC
  • Input Capacitance (Ciss): 6960pF
  • Output Capacitance (Coss): 1160pF
  • Reverse Recovery Charge (Qrr): 187nC
  • Operating Temperature Range: -55°C to +150°C
  • Mounting Style: Through Hole

Features

  • Advanced process technology for enhanced performance
  • Optimized for PDP sustain, energy recovery, and pass switch applications
  • Low EPULSE rating to reduce power dissipation
  • Low QG for fast switching response
  • High repetitive peak current capability for reliable operation
  • Short fall and rise times for fast switching
  • 175°C operating junction temperature for improved ruggedness
  • Repetitive avalanche capability for robustness and long-term reliability
  • Ideal for Class-D audio amplifier output stages (300W–500W half-bridge)

Applications

Class-D Audio Amplifiers: Ideal for high-power audio systems (300W–500W half-bridge)

Switching Power Supplies: Efficient switching for DC-DC and AC-DC converters

Motor Control: Drives high-current motors in industrial and automotive systems

Plasma Display Panels (PDP): Used in sustain, energy recovery, and pass switch circuits

Physical Attributes

  • Dimensions: ~10mm × 4.5mm × 15.6 mm (including leads)(L x W x H)
  • Weight: ~2g

Package Includes

  • 1 x IRFB4227 N-Channel MOSFET SMD (TO-220)

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