IRFB4310 N-Channel MOSFET SMD (TO-220)
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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IRFB4310 N-Channel MOSFET 100V 150A in TO-220 package for high-current power switching applications-2
IRFB4310 N-Channel MOSFET 100V 150A in TO-220 package for high-current power switching applications-1
IRFB4310 N-Channel MOSFET 100V 150A in TO-220 package for high-current power switching applications-3
IRFB4310 N-Channel MOSFET 100V 150A in TO-220 package for high-current power switching applications-2
IRFB4310 N-Channel MOSFET 100V 150A in TO-220 package for high-current power switching applications-1
IRFB4310 N-Channel MOSFET 100V 150A in TO-220 package for high-current power switching applications-3

IRFB4310 N-Channel MOSFET SMD (TO-220)

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  • Product SKU: INTEG431
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 100V, 150A N-Channel MOSFET
  • Ultra-low RDS(on): 4.0mΩ
  • High Pulse Current: 600A
  • Fast Switching: 310nC Gate Charge
  • TO-220 Through-Hole Package
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Specification

Description

IRFB4310 N-Channel MOSFET SMD (TO-220)

IRFB4310 is a power MOSFET. As we already know, the power MOSFET is designed to handle high levels of power. These MOSFETS perform significantly better than standard MOSFETs in the lower voltage range, thanks to their rapid switching. It operates on the same principles as standard MOSFETs. It's used in rectification circuits, SMPS (switch mode power supply), UPS (uninterrupted power supply), High switching circuits, and High-frequency switching circuits.

Technical Details

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 150A
  • Pulsed Drain Current (IDM): 600A
  • Gate-Source Voltage (VGS): ±20V
  • Maximum Power Dissipation (PD): 200W
  • On-Resistance (RDS(on)): 4.0mΩ @ VGS = 10V, ID = 75A
  • Gate Charge (Qg): 310nC (typical)
  • Input Capacitance (Ciss): 6010pF (typical)
  • Operating Temperature Range: -55°C to +175°C
  • Package Type: TO-220

Features

  • Improved avalanche, gate, and dynamic dv/dt ruggedness
  • Maximum power dissipation: 330W
  • Soldering temperature: 300°C
  • Enhanced body diode dv/dt and di/dt capability
  • Storage & operating temperature range: -65°C to +175°C

Applications

High-Efficiency Power Supplies: Ideal for switch-mode power supply (SMPS) designs

Motor Drives: Suitable for high-current motor control in industrial and automotive systems

DC-DC Converters: Used in synchronous buck, boost, and half-bridge converters

Battery Management Systems: Handles high-current switching in charging and discharging circuits

Physical Attributes

  • Dimensions: ~10mm × 4.5mm × 15.6 mm (including leads)(L x W x H)
  • Weight: ~2g

Package Includes

  • 1 x IRFB4310 N-Channel MOSFET SMD (TO-220)

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