IRFB4227 N-Channel MOSFET (TO-220)
![IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-1]()
![IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-2]()
![IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-3]()
![IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-1]()
![IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-2]()
![IRFB4227 N-Channel MOSFET 200V 65A in TO-220 package for Class-D amplifiers and high-power switching applications-3]()
Switching Power Supplies: Efficient switching for DC-DC and AC-DC converters
Motor Control: Drives high-current motors in industrial and automotive systems
Plasma Display Panels (PDP): Used in sustain, energy recovery, and pass switch circuits
-50%
Specification
Description
IRFB4227 N-Channel MOSFET (TO-220)
The IRFB4227 is a high-performance N-Channel Power MOSFET designed for demanding applications such as Class-D audio amplifiers, motor control, and high-efficiency switching power supplies. With a drain-source voltage rating of 200V and a continuous drain current of 65A, this MOSFET delivers reliable performance even under high-load conditions.Technical Details
- Transistor Type: N-Channel
- Package / Case: TO-220AB
- Maximum Drain-Source Voltage (VDS): 200V
- Continuous Drain Current (ID): 65A
- Maximum Gate-Source Voltage (VGS): ±20V
- Maximum Power Dissipation (PD): 300W
- RDS(on) (Max) @ VGS = 10V: 0.027Ω
- Gate Charge (Qg): 160nC
- Input Capacitance (Ciss): 6960pF
- Output Capacitance (Coss): 1160pF
- Reverse Recovery Charge (Qrr): 187nC
- Operating Temperature Range: -55°C to +150°C
- Mounting Style: Through Hole
Features
- Advanced process technology for enhanced performance
- Optimized for PDP sustain, energy recovery, and pass switch applications
- Low EPULSE rating to reduce power dissipation
- Low QG for fast switching response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- 175°C operating junction temperature for improved ruggedness
- Repetitive avalanche capability for robustness and long-term reliability
- Ideal for Class-D audio amplifier output stages (300W–500W half-bridge)
Applications
Class-D Audio Amplifiers: Ideal for high-power audio systems (300W–500W half-bridge)Switching Power Supplies: Efficient switching for DC-DC and AC-DC converters
Motor Control: Drives high-current motors in industrial and automotive systems
Plasma Display Panels (PDP): Used in sustain, energy recovery, and pass switch circuits
Physical Attributes
- Dimensions: ~10mm × 4.5mm × 15.6 mm (including leads)(L x W x H)
- Weight: ~2g
Package Includes
- 1 x IRFB4227 N-Channel MOSFET (TO-220)
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