IRF540N TO-220-3 N channel MOSFET
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High Current Capability: Capable of carrying a continuous drain current of up to 33A, making it suitable for high-power applications.
Low On-State Resistance: The low Rds(on) ensures efficient conduction and minimizes power losses.
Fast Switching Speed: Suitable for applications that require rapid switching.
TO-220 Package: The TO-220-3 package is a widely used through-hole package that facilitates easy mounting on a heatsink for thermal management.
Motor Control: Commonly employed for controlling motors and other inductive loads.
Inverters: Used in inverter circuits for converting DC to AC.
Switching Circuits: Suitable for electronic switching applications in various devices.
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-13%
IRF540N TO-220-3 N channel MOSFET
Available:In Stock
- Product SKU: INTEG126
₹ 25
₹ 29
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Warehouse Details
Specification
Description
The IRF540N is an N-channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage, high-current applications.Below is a Description of its key Features:
High Voltage Rating: With a maximum Vds of 100V, it can handle applications requiring higher voltage levels.High Current Capability: Capable of carrying a continuous drain current of up to 33A, making it suitable for high-power applications.
Low On-State Resistance: The low Rds(on) ensures efficient conduction and minimizes power losses.
Fast Switching Speed: Suitable for applications that require rapid switching.
TO-220 Package: The TO-220-3 package is a widely used through-hole package that facilitates easy mounting on a heatsink for thermal management.
Typical Applications:
Power Supplies: Used in various power supply circuits.Motor Control: Commonly employed for controlling motors and other inductive loads.
Inverters: Used in inverter circuits for converting DC to AC.
Switching Circuits: Suitable for electronic switching applications in various devices.
Features
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On Resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
Technical Details
- Package/Case: TO-220-3
- Mounting Type: Through Hole
- Product Series: IRF540
- No. of Output: 1
- Output Type: Analog Voltage
- Polarity: N-Channel
- Vds - Drain-Source Breakdown Voltage: 100 V
- Id - Continuous Drain Current: 33 A
- Rds On - Drain-Source Resistance: 44 mOhms
- Vgs - Gate-Source Voltage: 20 V
- Qg - Gate Charge: 47.3 nC
- Pd - Power Dissipation: 140 W
Physical Attributes
- Dimensions in mm (LxWxH) 10 x 4.4 x 15.65
- Weight (gm) : 2
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