IRFB4115 N-Channel MOSFET (TO-220)
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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IRFB4115 N-Channel MOSFET 150V 104A in TO-220 package for high-power switching applications-1
IRFB4115 N-Channel MOSFET 150V 104A in TO-220 package for high-power switching applications-2
IRFB4115 N-Channel MOSFET 150V 104A in TO-220 package for high-power switching applications-3

IRFB4115 N-Channel MOSFET (TO-220)

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  • Product SKU: INTEG427
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Specification

Description

IRFB4115 N-Channel MOSFET (TO-220)

The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched, and high frequency circuits.

Technical Details

  • Model: IRFB4115
  • Brand: Infineon
  • Transistor Type: MOSFET
  • Type of Control Channel: N-Type
  • Max. Drain-Source Voltage: 150V
  • Max. Gate-Source Voltage: 20V
  • Continuous Drain Current (VGS @ 10V): 74–104A
  • No. of Pins: 3 pins
  • Pulsed Drain Current: 420A
  • Max. Operating Junction Temperature: 175°C
  • Rise Time: 73ns
  • Max. Drain-Source On-State Resistance: 0.0093Ω
  • Max. Power Dissipation: 380W
  • Package: TO-220
  • Mounting: Through Hole

Features

  • Improved gate, avalanche, and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Halogen-free

Applications

Power Switching: Ideal for high-efficiency power supply circuits

Motor Control: Used in electric motor drivers and speed controllers

DC-DC Converters: Suitable for synchronous buck and boost converters

Battery Management Systems: Handles high current loads with low losses

Physical Attributes

  • Dimensions: ~10mm × 4.5mm × 15.6 mm (including leads)(L x W x H)
  • Weight: ~2g

Package Includes

  • 1 x IRFB4115 N-Channel MOSFET  (TO-220)

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