MJD3055G NPN Power Transistor | 10A 60V TO-252 Package

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MJD3055G High-Performance NPN Power Transistor-1

MJD3055G High-Performance NPN Power Transistor-2

MJD3055G High-Performance NPN Power Transistor-3

MJD3055G High-Performance NPN Power Transistor-1

MJD3055G High-Performance NPN Power Transistor-2

MJD3055G High-Performance NPN Power Transistor-3

MJD3055G High-Performance NPN Power Transistor – 10A 60V, TO-252 Package

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Product SKU: INTEG176

₹ 15 ~~₹ 29~~

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Specification

Description

MJD3055G High-Performance NPN Power Transistor – 10A 60V, TO-252 Package

The MJD3055G is a robust NPN power transistor designed for demanding power switching and amplification tasks. With a maximum collector current of 10A and a voltage rating of 60V, it delivers reliable performance in various high-power applications. Packaged in a compact TO-252 surface-mount case, this transistor ensures efficient heat dissipation and easy integration into your circuit designs.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

Transistor Type: NPN Power Transistor
Collector Current (Ic): 10A
Collector-Emitter Voltage (Vce): 60V
Package: TO-252 (DPAK) Surface Mount

Features

High current handling up to 10A
Collector-Emitter voltage rating of 60V
Low saturation voltage for efficient switching
Compact TO-252 (DPAK) surface-mount package
High power dissipation capability
Fast switching speed
Reliable thermal performance
Suitable for power amplification and switching applications

Applications :

Power switching circuits
Motor control and drivers
Power amplifiers
Voltage regulators
Industrial automation equipment

Physical Attributes

Weight (g): 2
Length: 2.92mm
Width: 1.3mm
Height: 1.1mm

Package Includes

1 x MJD3055G High-Performance NPN Power Transistor – 10A 60V, TO-252 Package

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