1N34 Point Contact Germanium Diode
Construction: The diode typically has a glass encapsulation with a small metal point contact at one end and a wire lead at the other.
Characteristics: The 1N34 diode has a forward voltage drop of around 0.2 to 0.3 volts and a low leakage current. It has a maximum forward current rating typically in the range of tens of milliamps.
Limitations: While the 1N34 diode has advantages in certain applications, it also has limitations such as low power handling capability and sensitivity to temperature variations.
1N34 Point Contact Germanium Diode
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- Product SKU: DIODE005
₹ 9
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Specification
Description
The 1N34 Point Contact Germanium Diode is a small signal diode commonly used in early electronic circuits, particularly in radio applications.Here's some information about it:
Material: The diode is made of germanium (Ge), a semiconductor material known for its low forward voltage drop compared to silicon diodes.Construction: The diode typically has a glass encapsulation with a small metal point contact at one end and a wire lead at the other.
Characteristics: The 1N34 diode has a forward voltage drop of around 0.2 to 0.3 volts and a low leakage current. It has a maximum forward current rating typically in the range of tens of milliamps.
Limitations: While the 1N34 diode has advantages in certain applications, it also has limitations such as low power handling capability and sensitivity to temperature variations.
Applications:
It is primarily used in low-frequency applications such as crystal radio receivers, where its low forward voltage drop allows it to operate efficiently with weak radio signals.Technical Details
- Peak Inverse Voltage: 45V
- Reverse Voltage DC: 20V
- Peak Forward Current: 150mA
- Surge Forward Current: 500mA
- Average Rectified Output Current: 50mA
- Operating Junction Temperature: 75℃
- Storage Temperature Range: -55℃ to +75℃