1N34 Point Contact Germanium Diode
Construction: The diode typically has a glass encapsulation with a small metal point contact at one end and a wire lead at the other.
Characteristics: The 1N34 diode has a forward voltage drop of around 0.2 to 0.3 volts and a low leakage current. It has a maximum forward current rating typically in the range of tens of milliamps.
Limitations: While the 1N34 diode has advantages in certain applications, it also has limitations such as low power handling capability and sensitivity to temperature variations.
Specification
Description
The 1N34 Point Contact Germanium Diode is a small signal diode commonly used in early electronic circuits, particularly in radio applications.Here's some information about it:
Material: The diode is made of germanium (Ge), a semiconductor material known for its low forward voltage drop compared to silicon diodes.Construction: The diode typically has a glass encapsulation with a small metal point contact at one end and a wire lead at the other.
Characteristics: The 1N34 diode has a forward voltage drop of around 0.2 to 0.3 volts and a low leakage current. It has a maximum forward current rating typically in the range of tens of milliamps.
Limitations: While the 1N34 diode has advantages in certain applications, it also has limitations such as low power handling capability and sensitivity to temperature variations.
Applications:
It is primarily used in low-frequency applications such as crystal radio receivers, where its low forward voltage drop allows it to operate efficiently with weak radio signals.Technical Details
- Peak Inverse Voltage: 45V
- Reverse Voltage DC: 20V
- Peak Forward Current: 150mA
- Surge Forward Current: 500mA
- Average Rectified Output Current: 50mA
- Operating Junction Temperature: 75℃
- Storage Temperature Range: -55℃ to +75℃