BD139 NPN Transistor
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![BD139 NPN Transistor-2]()
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![BD139 NPN Transistor-1]()
![BD139 NPN Transistor-2]()
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Maximum Collector-Base Voltage (Vcb): Typically around 80 volts.
Maximum Collector-Emitter Voltage (Vce): Usually around 80 volts.
Maximum Emitter-Base Voltage (Veb): Generally around 5 volts.
Collector Current (Ic): Typically up to a few amperes (commonly around 1.5A).
Power Dissipation (Pd): It can handle power dissipation up to several watts (commonly around 12.5W).
Gain (hFE or β): Typically falls in the range of 40 to 250, depending on operating conditions.
Package Type: The BD139 transistor is commonly available in a TO-126 or TO-220 package, which provides good thermal dissipation.
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BD139 NPN Transistor
Available:In Stock
- Product SKU: TRANS012
₹ 19
₹ 29
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Warehouse Details
Specification
Description
The BD139 is a widely-used NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) known for its versatility and reliability in various electronic circuits.Here's a description of its key characteristics:
Type: NPN bipolar junction transistor.Maximum Collector-Base Voltage (Vcb): Typically around 80 volts.
Maximum Collector-Emitter Voltage (Vce): Usually around 80 volts.
Maximum Emitter-Base Voltage (Veb): Generally around 5 volts.
Collector Current (Ic): Typically up to a few amperes (commonly around 1.5A).
Power Dissipation (Pd): It can handle power dissipation up to several watts (commonly around 12.5W).
Gain (hFE or β): Typically falls in the range of 40 to 250, depending on operating conditions.
Package Type: The BD139 transistor is commonly available in a TO-126 or TO-220 package, which provides good thermal dissipation.
Application:
Suitable for various amplification and switching applications in low to medium-power circuits. It finds applications in audio amplifiers, power supply circuits, motor control, and general-purpose switching circuits.Specifications
- Transistor Polarity: NPN
- Collector−Emitter Voltage (VCEO): 80V
- Collector−Base Voltage (VCBO): 80V
- Continuous Collector Current (Ic): 1.5A
- Continuous Base Current (Ib): 0.5A
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 12.5W
- Thermal Resistance (ΘJA): 100°C/W
- Thermal Resistance (ΘJC): 10°C/W
Features
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low-distortion complementary designs
- Easy to carry and handle
Applications
- RF Amplifiers
- Switching circuits
- Amplification circuits
- Audio amplifiers
- Load driver circuits
Pinout Configuration
- Emitter: Current Drains out through the emitter, normally connected to the ground
- Collector: Current flows in through the collector, normally connected to the load
- Base: Controls the biasing of the transistor, Used to turn ON or OFF the transistor.
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