BD677 NPN Transistor
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BD677 NPN Transistor

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  • Product SKU: TRANS010
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Specification

Description

The BD677 is a widely-used NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) commonly used in general-purpose amplification and switching applications.

Here is a brief description of its characteristics:

Type: NPN

Maximum Collector-Base Voltage (Vcb): Typically around 80 volts.

Maximum Collector-Emitter Voltage (Vce): Usually around 45 volts.

Maximum Emitter-Base Voltage (Veb): Generally around 5 volts.

Collector Current (Ic): Typically up to several amperes (commonly 4A).

Power Dissipation (Pd): It can handle power dissipation up to a few watts (commonly around 36W).

Gain (hFE or β): Typically falls in the range of 30 to 250, depending on operating conditions.

Package Type: Commonly available in TO-126 or TO-220 packages, which provide good thermal dissipation.

Application:

Suitable for various amplification and switching applications in low and medium power circuits.

Technical Details

  • Transistor Polarity: NPN
  • Collector−Emitter Voltage: 60V
  • Collector−Base Voltage: 60V
  • Emitter Base Voltage: 5V
  • Continuous Collector Current: 4A
  • Continuous Base Current: 0.1A
  • Operating Temperature Range: -65 ~ 150°C
  • Power Dissipation: 40W
  • DC Current Gain: 750
  • Low saturation voltage
  • Simple drive requirements
  • High safe operating area
  • For low-distortion complementary designs
  • Mounting Style: Through Hole
  • Package/Case: TO-126

Pin Configuration

  • Collector (C): Typically connected to the positive side of the circuit.
  • Base (B): Connected to the control signal that regulates the flow of current between the collector and emitter.
  • Emitter (E): Usually connected to the ground or the negative side of the circuit.

Application

  • General-Purpose Amplifier
  • Medium Power Linear And Switching

Documentation

Package Includes

  • 1 x BD677 NPN Transistor

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