2SC3512 NPN transistor
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![2SC3512 NPN Transistor_1]()
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![2SC3512 NPN Transistor_1]()
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Maximum Collector-Base Voltage (Vcb): Typically around 120 volts.
Maximum Collector-Emitter Voltage (Vce): Usually around 120 volts.
Maximum Emitter-Base Voltage (Veb): Generally around 5 volts.
Collector Current (Ic): Typically up to a few amperes (commonly around 10A).
Power Dissipation (Pd): It can handle power dissipation up to several watts (commonly around 100W).
Gain (hFE or β): Typically falls in the range of 50 to 500, depending on operating conditions.
Package Type: The 2SC3512 transistor is commonly available in various packages, such as TO-220 or TO-247, which provide good thermal dissipation.
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Specification
Description
The 2SC3512 is an NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) commonly used in various electronic circuits for amplification and switching applications.Here's a description of its key characteristics:
Type: NPN bipolar junction transistor.Maximum Collector-Base Voltage (Vcb): Typically around 120 volts.
Maximum Collector-Emitter Voltage (Vce): Usually around 120 volts.
Maximum Emitter-Base Voltage (Veb): Generally around 5 volts.
Collector Current (Ic): Typically up to a few amperes (commonly around 10A).
Power Dissipation (Pd): It can handle power dissipation up to several watts (commonly around 100W).
Gain (hFE or β): Typically falls in the range of 50 to 500, depending on operating conditions.
Package Type: The 2SC3512 transistor is commonly available in various packages, such as TO-220 or TO-247, which provide good thermal dissipation.
Application:
Suitable for various amplification and switching applications in medium to high-power circuits. It is commonly used in audio amplifiers, power supply circuits, motor control, and general-purpose switching circuits.Technical Details
- Type Designator: 2SC3512
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.6 W
- Maximum Collector-Base Voltage |Vcb|: 15 V
- Maximum Collector Current |Ic max|: 0.05 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 6000 MHz
- Forward Current Transfer Ratio (hFE), MIN: 25 Noise Figure, dB: -
