FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
Great
-50%
FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package
FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package_1
FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package_3

FQD10N60 N-Channel MOSFET | 600V 10A | TO-220 Package

Available:In Stock
  • Product SKU: INTEG261
Wishlist
₹ 49 ₹ 99
Available offers
Best Rates

on Express Shipping – Hurry! Shipping starts from Rs69.

Tc
Free Shipping Offer -

Avail free shipping on all orders above Rs999.

Tc
Volume Discounts-

Buy More Save More! Discounts upto 20%. Contact us

Special Bulk Discounts

for colleges, Schools, Companies & resellers Contact us

Cash on Delivery

Available above Rs 499

Tc
Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • FQD10N60 N-Channel MOSFET
  • 600V Drain-Source Voltage
  • 10A Continuous Current
  • Low Gate Charge
  • TO-220 Package
Services
  • Email Support
  • Video Support to be purchased separately
Easy Payment Options
  • Netbanking
  • Debit/Credit cards
  • Cash on Delivery
  • E-wallets/UPI
Shipping Details
International Shipping
Available

  Need Volume Discounts? Deals are specially designed for you. Click here

  Need Customization? Provide us more details Click here

Warehouse Details   36H-165Q

Image
Secure

Specification

Description

FQD10N60 N-Channel MOSFET 600V 10A – TO-220 Package

The FQD10N60 is a high-voltage N-Channel Power MOSFET capable of withstanding up to 600V and handling 10A continuous current. It is designed for high-efficiency switching applications with low gate charge and fast switching speed. Its TO-220 package provides effective heat dissipation, ideal for power supplies, inverters, and motor drive applications.

Technical Details

  • Part Number: FQD10N60
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 10A
  • Gate Threshold Voltage (VGS(th)): 2V – 4V
  • Maximum Gate-Source Voltage (VGS): ±30V
  • Drain-Source On Resistance (RDS(on)): ~0.85Ω
  • Total Gate Charge (Qg): ~55nC
  • Power Dissipation: ~125W
  • Package: TO-220
  • Mounting Type: Through-Hole

Features

  • High voltage capability up to 600V
  • Low gate drive requirements
  • Fast switching speed
  • Low RDS(on) for better efficiency
  • TO-220 package with good thermal dissipation

Applications

  • Switching Power Supplies
  • Motor Control
  • Lighting Ballasts
  • Inverter Circuits
  • General Purpose High-Voltage Switching

Physical Attributes

  • Package: TO-220
  • Leads: 3 (Gate, Drain, Source)
  • Dimensions: Approx. 10mm × 15mm × 4.5mm (Body)
  • Mounting Type: Through-Hole
  • Weight: ~1g

Package Includes

  • 1 x FQD10N60 N-Channel MOSFET 600V 10A – TO-220 Package

Customer Reviews

Be the first to write a review
0%
(0)
0%
(0)
0%
(0)
0%
(0)
0%
(0)