FQD1N60 N-Channel MOSFET High-Power Switching Transistor
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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FQD1N60 N-Channel MOSFET High-Power Switching Transistor

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  • Product SKU: INTEG185
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 600V N-Channel MOSFET
  • Low gate charge
  • Fast switching
  • Compact DPAK package
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Specification

Description

FQD1N60 N-Channel MOSFET High-Power Switching Transistor

The FQD1N60 is a high-performance N-Channel MOSFET designed for efficient high-voltage, high-speed switching applications. Housed in a compact TO-252 (DPAK) package, it features low gate charge, low on-resistance, and fast switching capability, making it ideal for use in power supplies, motor drivers, converters, and other demanding electronic circuits. With a drain-source voltage rating of 600V and continuous drain current handling of up to 1A, the FQD1N60 provides excellent reliability and thermal performance in compact designs.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

  • Part Number: FQD1N60
  • Type: N-Channel MOSFET
  • Package: TO-252 (DPAK)
  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 1A
  • Gate Threshold Voltage (VGS(th)): 2V to 4V
  • RDS(on) (Max): 5Ω @ VGS = 10V, ID = 0.5A
  • Total Gate Charge (Qg): 12nC (typical)
  • Input Capacitance (Ciss): 230pF (typical)
  • Power Dissipation: 2W (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Mounting Type: Surface Mount

Features

  • High voltage capability: 600V VDS
  • Low gate charge for efficient switching
  • Compact TO-252 (DPAK) surface-mount package
  • Fast switching speed for high-frequency applications
  • Low RDS(on) for reduced conduction losses
  • Thermally efficient design supports up to 1A current
  • Reliable performance in high-power applications
  • Suitable for power supplies, converters, and motor control

Applications :

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control circuits
  • Battery management systems
  • Inverter circuits

Physical Attributes

  • Weight (g): 2
  • Length: 2.92mm
  • Width: 1.3mm
  • Height: 1.1mm

Package Includes

  • 1 x FQD1N60 N-Channel MOSFET High-Power Switching Transistor

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