FQD4N60 N-Channel MOSFET High-Power Switching Transistor

FQD4N60 N-Channel MOSFET High-Power Switching Transistor

The FQD4N60 is a high-performance N-Channel MOSFET designed for high-voltage and high-current applications. With a drain-to-source voltage rating of 600V and continuous current capability of up to 4A, this device delivers efficient and reliable switching performance. Its low R_DS(on), fast switching speed, and low gate charge make it ideal for use in power supplies, lighting systems, motor drivers, and other demanding electronic circuits. The FQD4N60 is housed in a compact TO-252 (DPAK) package and is RoHS compliant, ensuring environmental safety and compliance with industry standards.

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