FQD5N60 N-Channel MOSFET High-Power Switching Transistor
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This MOSFET offers a low RDS(on) (2.5Ω max), ensuring minimal conduction losses and greater efficiency in power conversion circuits. Its rugged design, high avalanche energy capability, and fast switching characteristics contribute to long-term durability and reliability under stressful electrical conditions. These features make the FQD5N60 a cost-effective and powerful solution for circuits requiring high efficiency and robust performance.
Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.
-48%
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
Available:In Stock
- Product SKU: INTEG188
₹ 25
₹ 49
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Warehouse Details
Specification
Description
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET is a high-power, high-voltage switching transistor engineered for demanding applications like SMPS (Switch Mode Power Supplies), motor controllers, inverters, and LED drivers. With a 600V drain-source voltage, 5A continuous current rating, and TO-220 package, it provides excellent thermal performance and mechanical stability. Designed using advanced DMOS technology, it delivers high-speed switching, low gate charge, and enhanced energy efficiency, making it suitable for both industrial and consumer-grade electronics.This MOSFET offers a low RDS(on) (2.5Ω max), ensuring minimal conduction losses and greater efficiency in power conversion circuits. Its rugged design, high avalanche energy capability, and fast switching characteristics contribute to long-term durability and reliability under stressful electrical conditions. These features make the FQD5N60 a cost-effective and powerful solution for circuits requiring high efficiency and robust performance.
Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.
Technical Details
- Type: N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 5A
- Gate Threshold Voltage (VGS(th)): 2.0–4.0V
- RDS(on): 2.5Ω max
- Power Dissipation: 125W
- Package: TO-220
- Technology: Planar Stripe / DMOS
Features
- High Voltage Handling up to 600V
- Low Gate Charge for faster switching
- Rugged Avalanche Rated for durability
- Low On-Resistance (RDS(on))
- Fast Switching Speed suitable for SMPS
- High Efficiency power conversion
- TO-220 Package for better heat dissipation
Applications :
- Switch Mode Power Supplies (SMPS)
- LED Drivers
- Battery Chargers
- Motor Control Systems
- Inverters and Converters
- Industrial Power Systems
Physical Attributes
- Weight (g): 2
- Length: 2.92mm
- Width: 1.3mm
- Height: 1.1mm
Package Includes
- 1 x FQD5N60 N-Channel MOSFET High-Power Switching Transistor
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