FQD6N60 N-Channel MOSFET High-Power Switching Transistor
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
Great
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FQD5N60 N-Channel MOSFET High-Power Switching Transistor_2
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_1
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_2
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_1

FQD6N60 N-Channel MOSFET High-Power Switching Transistor

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  • Product SKU: INTEG189
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 600V, 6A N-Channel MOSFET
  • Low RDS(on), fast switching
  • TO-220 package
  • Low gate charge
  • Avalanche energy rated
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Specification

Description

FQD6N60 N-Channel MOSFET High-Power Switching Transistor

FQD6N60 N-Channel MOSFET is a high-power, high-voltage switching transistor designed for use in circuits such as SMPS (Switch Mode Power Supplies), LED drivers, inverters, and motor control systems. It offers a drain-source voltage of 600V and a continuous drain current of 6A, making it suitable for high-efficiency power conversion and switching. This MOSFET uses advanced DMOS technology and comes in a standard TO-220 package for improved heat dissipation and mechanical reliability.

The FQD6N60 is optimized for low gate charge and fast switching, making it ideal for applications requiring high-speed operation with minimal power loss. With a low RDS(on) value, it ensures reduced conduction losses and enhances overall energy efficiency. Its rugged avalanche-rated design and thermal stability enable it to operate reliably in harsh conditions, providing a dependable solution for industrial and consumer-grade electronics.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 6A
  • Gate Threshold Voltage (VGS(th)): 2.0–4.0V
  • RDS(on): Approx. 1.7Ω
  • Power Dissipation: 125W
  • Package: TO-220
  • Technology: Planar Stripe / DMOS

Features

  • 600V High Voltage Capability
  • 6A Continuous Drain Current
  • Fast Switching and Low Gate Charge
  • Low RDS(on) for reduced losses
  • Rugged and Avalanche Rated Design
  • Efficient Thermal Performance
  • TO-220 Package for Easy Mounting

Applications :

  • Switch Mode Power Supplies (SMPS)
  • Motor Drivers and Controllers
  • Battery Chargers
  • LED Lighting Systems
  • Inverter and Converter Circuits
  • Industrial and Home Power Systems

Physical Attributes

  • Weight (g): 2
  • Length: 2.92mm
  • Width: 1.3mm
  • Height: 1.1mm

Package Includes

  • 1 x FQD5N60 N-Channel MOSFET High-Power Switching Transistor

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