FQD7N60 N-Channel MOSFET High-Power Switching Transistor
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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FQD5N60 N-Channel MOSFET High-Power Switching Transistor_2
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_1
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_2
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_1

FQD7N60 N-Channel MOSFET High-Power Switching Transistor

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  • Product SKU: INTEG190
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 600V, 7A N-Channel MOSFET
  • Low gate charge
  • Fast switching
  • Low RDS(on)
  • TO-220 package
  • For SMPS, inverters
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Specification

Description

FQD7N60 N-Channel MOSFET High-Power Switching Transistor

FQD7N60 N-Channel MOSFET is a high-voltage, high-speed power switching device designed for applications like SMPS (Switched Mode Power Supplies), lighting ballasts, and inverters. With a voltage rating of 600V and a continuous drain current capability of 7A, it is well-suited for medium to high-power switching applications. Its low gate charge and low RDS(on) ensure faster switching and reduced power losses, improving efficiency in power conversion systems.

This transistor uses advanced planar stripe and DMOS technology, making it reliable and robust under demanding conditions. It comes in a TO-220 package, offering ease of heat dissipation and secure mounting. The FQD7N60 is also avalanche-rated and capable of withstanding high energy pulses, adding to its durability in rugged environments.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (Vds): 600V
  • Continuous Drain Current (Id): 7A
  • Gate Threshold Voltage (Vgs(th)): 2.0V – 4.0V
  • RDS(on): 1.4 Ohm max @ Vgs = 10V
  • Gate Charge (Qg): 27 nC typical
  • Maximum Power Dissipation: 125W

Features

  • High voltage and current handling
  • Fast switching speed
  • Low gate charge
  • Low on-state resistance
  • Rugged and avalanche rated

Applications :

  • Switched Mode Power Supplies (SMPS)
  • Battery chargers
  • Lighting ballasts
  • Inverters and converters
  • Industrial motor drives

Physical Attributes

  • Weight (g): 2
  • Length: 2.92mm
  • Width: 1.3mm
  • Height: 1.1mm

Package Includes

  • 1 x FQD7N60 N-Channel MOSFET High-Power Switching Transistor

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