FQD8N60 N-Channel MOSFET High-Power Switching Transistor
Review: 5 - "A masterpiece of literature" by John Doe, written onMay 4, 20020
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FQD5N60 N-Channel MOSFET High-Power Switching Transistor_2
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_1
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_2
FQD5N60 N-Channel MOSFET High-Power Switching Transistor
FQD5N60 N-Channel MOSFET High-Power Switching Transistor_1

FQD8N60 N-Channel MOSFET High-Power Switching Transistor

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  • Product SKU: INTEG191
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 60V, 20A N-Channel MOSFET
  • Low gate charge
  • Fast switching
  • Low RDS(on)
  • TO-220 package
  • For motor drivers, converters
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Specification

Description

FQD8N60 N-Channel MOSFET High-Power Switching Transistor

FQD8N60 N-Channel MOSFET is a high-voltage, high-speed power switching device designed for applications like SMPS (Switched Mode Power Supplies), lighting ballasts, and motor drives. With a voltage rating of 600V and a continuous drain current capability of 8A, it is ideal for medium to high-power switching systems. Its low gate charge and low RDS(on) enable faster switching and reduce power loss, improving overall energy efficiency.

This transistor is built with advanced DMOS technology for enhanced reliability and rugged performance. It comes in a TO-220 package for efficient heat dissipation and ease of installation. The FQD8N60 is also avalanche-rated, making it suitable for circuits with inductive loads and dynamic switching conditions.

Note:
Product Images are shown for illustrative purposes only and may differ from the actual product.

Technical Details

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (Vds): 600V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)): 2.0V – 4.0V
  • RDS(on): 1.2 Ohm max @ Vgs = 10V
  • Gate Charge (Qg): 30 nC typical
  • Maximum Power Dissipation: 150W

Features

  • High voltage and current handling
  • Fast switching performance
  • Low gate charge
  • Low on-state resistance
  • Rugged and avalanche energy rated

Applications :

  • Switched Mode Power Supplies (SMPS)
  • Battery chargers
  • Lighting ballasts
  • Inverters and converters
  • Industrial motor drives

Physical Attributes

  • Weight (g): 2
  • Length: 2.92mm
  • Width: 1.3mm
  • Height: 1.1mm

Package Includes

  • 1 x FQD8N60 N-Channel MOSFET High-Power Switching Transistor

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