Below are the key specifications and features of the 1N5819:

Type: The 1N5819 is a Schottky diode, which is a semiconductor diode with a low forward voltage drop compared to standard diodes. It is commonly used in applications requiring fast switching and low power loss.

Power Dissipation: It can handle up to 1 watt of power dissipation under normal operating conditions.

Forward Voltage Drop: The forward voltage drop across the diode is typically much lower than standard silicon diodes, typically around 0.3 volts at low currents.

Reverse Voltage Rating: The maximum reverse voltage (VR) the 1N5819 can withstand without breakdown is usually around 40 volts, although exact specifications may vary depending on the manufacturer.

Forward Current: The maximum average forward rectified current (IF(AV)) for the 1N5819 is usually around 1 ampere.

Package Type: It is typically available in through-hole packages such as axial leads or surface-mount packages like SOD-123, making it suitable for various circuit designs.

Construction: Schottky diodes are constructed using a metal-semiconductor junction rather than a P-N junction in standard diodes. This construction contributes to their fast switching speed and low forward voltage drop characteristics.