IRFB4019 N-Channel MOSFET SMD (TO-220)
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IRFB4019 N-Channel MOSFET 100V 75A in TO-220 package for Class-D audio and power switching applications-1
IRFB4019 N-Channel MOSFET 100V 75A in TO-220 package for Class-D audio and power switching applications-2
IRFB4019 N-Channel MOSFET 100V 75A in TO-220 package for Class-D audio and power switching applications-3
IRFB4019 N-Channel MOSFET 100V 75A in TO-220 package for Class-D audio and power switching applications-1
IRFB4019 N-Channel MOSFET 100V 75A in TO-220 package for Class-D audio and power switching applications-2
IRFB4019 N-Channel MOSFET 100V 75A in TO-220 package for Class-D audio and power switching applications-3

IRFB4019 N-Channel MOSFET SMD (TO-220)

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  • Product SKU: INTEG429
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Highlights
  • Original, High Quality
  • KitsGuru Warranty
  • 100V, 75A N-Channel MOSFET
  • Low RDS(on): 7.8mΩ
  • Optimized for Class-D Audio Amps
  • Low Gate & Recovery Charge
  • TO-220 Through-Hole Package
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Specification

Description

IRFB4019 N-Channel MOSFET SMD (TO-220)

IRFB4019 N CHANNEL Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability.

Technical Details

  • Transistor Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 75A
  • Drain-Source On-State Resistance (RDS(on)): 7.8mΩ
  • Gate Threshold Voltage (VGS(th)): 2.0V – 4.0V
  • Gate Charge Total (QG): 44nC (typ)
  • Reverse Recovery Charge (QRR): 46nC (typ)
  • Power Dissipation: 230W
  • Max Junction Temperature (TJ): 175°C
  • Package: TO-220AB
  • Mounting Type: Through Hole

Features

  • Key parameters optimized for Class-D audio amplifier applications
  • Low RDS(on) for improved efficiency
  • Low QG and QSW for better THD and efficiency
  • Low QRR for reduced EMI and improved THD
  • 175°C operating junction temperature for enhanced ruggedness
  • Supports up to 200W per channel into 8Ω load (half-bridge amplifier)

Applications

Motor Control Systems: Ideal for driving high-current motors in industrial and automotive applications

DC-DC Converters: Efficient switching in buck, boost, and synchronous converter designs

Power Supplies: Used in high-efficiency AC-DC and DC-DC power regulation

Battery Management: Handles high discharge currents in battery-powered devices

Physical Attributes

  • Dimensions: ~10mm × 4.5mm × 15.6 mm (including leads)(L x W x H)
  • Weight: ~2g

Package Includes

  • 1 x IRFB4019 N-Channel MOSFET SMD (TO-220)

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