IRF540N TO-220-3 N channel MOSFET
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IRF540N TO-220-3 N channel MOSFET

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Specification

Description

The IRF540N is an N-channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage, high-current applications.

Below is a Description of its key Features:

High Voltage Rating: With a maximum Vds of 100V, it can handle applications requiring higher voltage levels.

High Current Capability: Capable of carrying a continuous drain current of up to 33A, making it suitable for high-power applications.

Low On-State Resistance: The low Rds(on) ensures efficient conduction and minimizes power losses.

Fast Switching Speed: Suitable for applications that require rapid switching.

TO-220 Package: The TO-220-3 package is a widely used through-hole package that facilitates easy mounting on a heatsink for thermal management.

Typical Applications:

Power Supplies: Used in various power supply circuits.

Motor Control: Commonly employed for controlling motors and other inductive loads.

Inverters: Used in inverter circuits for converting DC to AC.

Switching Circuits: Suitable for electronic switching applications in various devices.

Features

  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On Resistance Rds(on) of 44mohm at Vgs of 10V
  • Power dissipation Pd of 130W at 25°C
  • Continuous drain current Id of 33A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C
  • Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Technical Details

  • Package/Case: TO-220-3
  • Mounting Type: Through Hole
  • Product Series: IRF540
  • No. of Output: 1
  • Output Type: Analog Voltage
  • Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 33 A
  • Rds On - Drain-Source Resistance: 44 mOhms
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 47.3 nC
  • Pd - Power Dissipation: 140 W

Physical Attributes

  • Dimensions in mm (LxWxH) 10 x 4.4 x 15.65
  • Weight (gm) : 2

Documentation

Package Includes

  • 1 x IRF540N (TO-220-3) N-channel MOSFET

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